Supplemental Number 1

https://doi.org/10.60893/figshare.aip.30374959

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posted on 2025-11-04, 13:00 authored by Ahsanul Mohaimeen Audri, Chung-Ping Ho, Emerson Hollar, Jingjing Shi, Esmat Farzana

Simulated lattice temperature contour profile of vertical β-Ga2O3 SBDs at forward bias 4V with baseline BaTiO3 and BaTiO3/AlN FP

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DOI - Is supplement to <strong>Electro-thermal Co-design of Vertical β-Ga<sub>2</sub>O<sub>3</sub> Schottky Diodes with </strong><strong>High-permittivity BaTiO3 Field-plate for High-field and Thermal Management</strong>

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Vertical Diode Ga2O3 Field Management BaTiO3 Lattice Temperature

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