posted on 2025-11-19, 13:02authored byZhenqi Wu, Xiaoqian Zhang, Zhendong Wang, Kaifei Liu, Rongshun Sun, Kai Gu, Jiacheng Gao, shuo wang, Lujun Wei, Ping Liu, Wei Niu, Yong Pu
Supplementary Materials for detailed discussions on the mechanisms of in-plane current-induced magnetization switching and multistate behavior, the repeatability of the measurements, the HAADF-STEM image of the FCGT, current- and field-angle-dependent magnetic properties of the FCGT nanodevice, current-driven magnetization switching in the FCGT nanodevice, endurance tests of the magnetization switching stability, critical current densities under different magnetic fields, XRD patterns of FCGT sample under different applied currents, and current-driven magnetization switching with in-plane magnetic fields.