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posted on 2025-07-25, 12:03 authored by Seonghyeon Kim, Tatiana Kuznetsova, Juhan Kim, Jongkyoung Ko, Jihoon Seo, Roman Engel-Herbert, Kookrin Char

X-ray data, sample fabrication, and STEM image.

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Related Materials

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DOI - Is supplement to <strong>Epitaxial integration of perovskite based double-gate field effect transistor with silicon</strong>

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Engineering

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Perovskite multi-gate FETs BaSnO3

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