Supplemental Material: Electronic Transport Properties of Janus Ge2PAs Monolayer: A Prototype 2D Metal-Semiconductor-Metal Device

the electronic band structure of Ge$_2$PAs monolayer with SOC; the transmission spectra and the projected density of states of devices of 3 nm, 4.5 nm, and 6.5 nm channel length under 0 V, 0.5 V, and 1V bias voltages; the projected local density of states of devices with 6.5 nm channel length; I-V characteristic curves for higher doping concentrations and p-type doping; band structures and PDOS of undoped and n-type doped Ge$_2$PAs monolayer; Hartree difference potential and its derivative along the transport direction; differential conductance as a function of bias voltage; on/off current ratio of 6.5 nm MSM device; PLDOS for the 6.5 nm MSM device under 4\% tensile strain and corresponding I-V characteristics.