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posted on 2025-07-09, 12:05 authored by Cheng-Wei Lee, Kingsley Egbo, Emily Garrity, Matthew Jankousky, Henry Garland, Andriy Zakutayev, Vladan StevanovicThe Supplemental Material includes (1) effect of correction term on predicted net carrier concentration, (2) predicted pO2-T phase diagram for T-In2Si2O7, (3) 2Theta-Omega scans of thin films under different annealing environments, (4) AFM micrographs of T-In2Ge2O7 thin films grown by PLD, (5) predicted band structure for T- and P-In2Si2O7, (6) defect diagram under O-rich condition, (7) Tables on FERE values and enthalpy under pressure, (8) Four-phase equilibrium regions, and (9) defect formation energies for different dopant (10) density of states for defect calculations using HSE06 (11) GW rigid shift to PBE band edges
