AIP Publishing
Browse

Supplemental Material

Download (237.83 kB)
figure
posted on 2025-06-12, 12:04 authored by Kyeong-Jae Byeon, I K M Reaz Rahman, Inha Kim, Howoo Park, Ali Javey
Contains Figure S1, S2 and S3

History

Related Materials

  1. 1.
    DOI - Is supplement to Quantitative characterization of ZrO<sub>2</sub> gate dielectric interface with tellurium

Usage metrics

    Applied Physics Letters

    Categories

    Keywords

    interface trap densityhigh-k dielectricMOS capacitor

    Licence

    CC BY 4.0

    Exports

    RefWorks
    BibTeX
    Ref. manager
    Endnote
    DataCite
    NLM
    DC