Supplement Number 2
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posted on 2025-03-25, 12:02 authored by Yanpeng Song, Guangxing Wan, Xiaomeng Liu, Junjie Li, Hailing Wang, Xinhe Wang, Kuanrong Hao, Z. Bai, Xiangsheng Wang, Zhenzhen Kong, Junfeng Li, Jun Luo, Yongkui Zhang, Huilong Zhu, Chao Zhao, Guilei WangFigure S1. Strain measurements were performed on a HRTEM image using GPA software in Gatan Digital Micrograph. Figure S2. The TCAD simulation of the three different morphologies of SiGe cladding Si nanowire devices.
