Supplement Number 1, Supplement Number 2.
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posted on 2024-12-10, 13:02 authored by Lei Yang, Zechen Hu, Zunke Liu, Xiang Lv, Xiaodong Zhu, Yuheng Zeng, Xuegong Yu, Deren YangFig. S1. (a) The plots of C-V and calculated 1/C2-V for the junctions with N-free poly-Si. (b) The plots of C-V and calculated 1/C2-V for the junctions with N co-doped poly-Si. Six samples for each group.
Fig. S2. The doping concentration of element of P and N in poly-Si measured by TOF-SIMS.
