Supplement Number 1

The supplementary material provides detailed supporting information, including surface FESEM images of ZnO and NiO thin films highlighting their morphology, and EDS mapping results showing the distribution of In, Sn, O, Ni, and Zn elements across different layers. I-V characteristics were measured for both devices in the dark and under various illumination wavelengths. The supplementary data also provide the detectivity and NEP as functions of wavelength under different reverse bias voltages. Additionally, I-V characteristics of both devices under 365 nm illumination at different light intensities are presented, along with self-powered I-V characteristics of the ITO/NiO/ZnO device under dark and varying wavelengths.