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posted on 2025-09-10, 12:04 authored by Qunsi Yang, Yifu Wang, Xinghua Liu, Qianyu Hou, Lihui Song, Hai Lu, Deren Yang, Xiaodong Pi
the detailed information on the photocurrent mapping and DLTS characterization, high-temperature current-voltage characteristics, responsivity benchmarking against various 4H-SiC UV detector architectures, double-exponential decay function fitting results, and bias-dependent gain recovery analysis.

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  1. 1.
    DOI - Is supplement to <strong>Defect-Annealing-Induced Optical Gain Recovery in Electron-Irradiated 4H-SiC UV Phototransistors</strong>

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    Applied Physics Letters

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    electron irradiationUV detection4H-SiCphototransistor

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