Supplement Number 1

Fig S1. Ids-Vds curves of Au/WSe2/Au and Au/1T'-MoTe2/Au devices in the dark state. Fig S2. The surface potential difference at the interfaces of the Au/WSe2/1T'-MoTe2 heterojunction. Fig S3. J-t curves of the Au/WSe2/1T'-MoTe2 heterojunction under 405 (a), 660 (b), 808 (c), 1064 (d), and 1550 (e) nm light illumination with varying OPI at 0 V bias. Fig S4. The On/Off ratio, R, EQE, and D* of the Au/WSe2/1T'-MoTe2 heterojunction under 660 nm light illumination with different OPI: (a) On/Off ratio and R; (b) EQE and D*. Fig S5. Response time curves of the heterojunction under 405 (a), 660 (b), 808 (c), 1064 (d), and 1550 nm (e) light illumination. Fig S6. The stability of the Au/WSe2/1T'-MoTe2 heterojunction under light switching conditions with a 600 s period and 2 s interval. Fig S7. (a) Current response of the heterojunction under 1550 nm light illumination with different pulse widths at a bias of -250 mV bias. (b) Current response under 1550 nm light illumination with varying incident OPI at a bias of -250 mV bias. (c) Current response under 1550 nm light illumination with different bias voltages. Fig S8. (a, d) Current response of the heterojunction under 1064 nm light illumination with different pulse widths at biases of 180 mV (a) and -180 mV (d), respectively. (b, e) Current response under 1064 nm light illumination with varying incident OPI at biases of 180 mV (b) and -180 mV (e), respectively. (c, f) Current response under 1064 nm light illumination at positive (c) and negative (f) bias voltages, respectively. Fig S9. (a, c) Current response of the Au/WSe2/1T'-MoTe2 heterojunction as a function of 1064 nm light pulse numbers at biases of 180 mV (a) and -180 mV (c), respectively. (b, d) Current response of the Au/WSe2/1T'-MoTe2 heterojunction under 1064 nm light illumination with different pulse widths at biases of 180 mV (b) and -180 mV (d), respectively.