Supplement Number 1
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posted on 2025-06-13, 12:07 authored by Rukai Jiang, Xuhong Hu, Zhuokun He, Yaoze Li, Shengheng Ma, Qianyu Hou, Wenhong SunThe supplementary material document contains the transfer characteristics, output characteristics, and breakdown characteristic curves of the double barrier p-GaN gate enhancement-mode HEMT device (Device C).
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- 1. DOI - Is supplement to High threshold voltage enhancement-mode AlGaN/GaN HEMT with double barrier hybrid gate
