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posted on 2024-10-21, 04:01 authored by Yiwei Duan, Haixia Gao, Yintang Yang
Supplementary material contains the I-V characteristics of the Ta device and the Ti device under various test temperature, the SER/RESET voltage distribution for 2,000 cycles for the Ta TE device, and I-V characteristics for reset process of the Ti devices and Ta devices with RESET compliance currents of 0.7mA, 0.8mA, and 0.9mA.

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    Applied Physics Letters

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    RRAMSupplementary material contains the I-V characteristics of the Ta device and the Ti device under various test temperature, the SER/RESET voltage distribution for 2,000 cycles for the Ta TE device, and

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