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posted on 2025-10-21, 12:01 authored by Longyu Lyu, haiyan nan, Yuan Gao, Jialing Jian, Zhengjin Weng, Chengxin Jiang, Haomin Wang, LiangLiang Lin, Shaoqing Xiao, Xiaofeng Gu
See the supplementary material for details on manufacturing process of device, AFM images of the patterned substrate, photoelectric characteristics of the ReS2 / Si heterojunction device under illuminations with 447 nm and 940 nm lasers of different optical powers and the response time of the intrinsic ReS2 device.

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    DOI - Is supplement to <strong>High-Speed</strong><strong><strong>, </strong></strong><strong><strong>Self-Powered</strong></strong><strong><strong> and </strong></strong><strong><strong>Position-Sensitive Photodetector Based on ReS</strong></strong><strong><strong>₂</strong></strong><strong><strong> </strong></strong><strong><strong>/</strong></strong><strong><strong> </strong></strong><strong><strong>Si Heterojunction</strong></strong>

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    Applied Physics Letters

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    HeterojunctionPhotodetectorrhenium disulfideSelf-PoweredPosition-Sensitive

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