SUPPLEMENTARY MATERIAL

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posted on 2025-09-22, 04:02 authored by Noriyuki Urakami, Rin Funase, Yuri Suzuki, Keisuke Minehisa, Yoshio Hashimoto, Fumitaro Ishikawa

detailed information on the device process, GaAs substrate J-V characteristics, GaAs/Al0.2Ga0.8As NW crystallographic evaluations, irradiated photon energy dependence J-V curves, several NWs device J-V characteristics, and GaAs/Al0.2Ga0.8As core-shell NWs dark and photo conductivities box plots