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Quantum Emitters in Aluminum Nitride Induced by Heavy Ion Irradiation

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posted on 2024-07-11, 12:03 authored by Alexander Senichev, Zachariah Martin, Yongqiang Wang, Owen Matthiessen, Alexei Lagutchev, Han Htoon, Alexandra Boltasseva, Vladimir Shalaev
The supplementary information provides details on quantification of the density of single-photon emitters, PL data and analysis for AlN samples implanted with Zr and Kr ions. It includes various PL intensity maps for Kr-implanted samples across different ion fluences with corresponding PL spectra and second-order autocorrelation histograms. It also features additional room-temperature PL spectra from Zr-implanted samples, illustrating emitter characteristics, such as linewidth and wavelength of emission lines. Data on ZPL peak wavelength distribution from Kr-implanted samples, including histograms of g(2)(0) values, are presented. Additionally, polarization-dependent intensity maps for the Zr-implanted sample highlight differences in emission due to polarizer orientation. Detailed examinations of background PL spectra for both Zr and Kr implanted samples at various fluences showcase changes in emission intensity and the emergence of new PL bands, particularly around 700 nm. The supplementary material also includes background fluorescence intensity analyses as a function of ion fluence, specifically noting changes in Zr and Kr-implanted samples under 405 nm excitation, aiding in understanding the effects of heavy ion implantation on the formation and characteristics of single-photon emitters in AlN.

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