Probing electronic and dielectric properties of ultrathin Ga2O3/Al2O3 atomic layer stacks made with in vacuo atomic layer deposition

Data table for the various device structures, Additional STS measurements demonstrating the defective growth of Th-AlOx and Al2O3 on defective IL, heating calibration for the ALD chamber, measured Eb values with error, specific capacitance vs voltage curves at different frequencies of the Ga2O3/Al2O3 ALS capacitors, DC IV curves, and electric conductance curves of Ga2O3/Al2O3 ALS samples grown on Al electrodes with a negligible defective interface.