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Lattice recovery and microstructural defects in thermally annealed phosphorous and aluminium implanted (0001) 4H-SiC

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posted on 2025-05-05, 04:04 authored by Domenico Mello, Andrea Severino, Emiliano Burresi, Giuseppe Anastasi, Nicolò Piluso, Massimo Arena, Leander Tapfer
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    Journal of Applied Physics

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    Keywords

    4H-SiC crystalsion implantationthermal annealingdopingpoint defects

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    CC BY 4.0

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