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Impurities of 4H silicon carbide: site preference, lattice distortion, solubility and charge transition levels

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posted on 2024-05-17, 11:53 authored by yuanchao huang, Rong Wang, Deren Yang, Xiaodong Pi
PART I Formation-energy diagrams;PART II Solubility of impurities as a function of temperature

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    Journal of Applied Physics

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    Formation-energySolubility

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