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Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

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posted on 2024-09-18, 12:01 authored by Alexis Papamichail, Axel Persson, Steffen Richter, Vallery Stanishev, Nerijus Armakavicius, Philipp Kühne, Shiqi Guo, Per Persson, Plamen Paskov, Niklas Rorsman, Vanya Darakchieva
Additional details about the XRD reciprocal space maps, the surface morphology (AFM images), additional STEM images of the structures and, dislocation densities as estimated from XRD, for the studied samples. A table listing the measured and simulated Ns values according to the EDS-measured and the intended-nominal Al profiles is also provided.

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    Applied Physics Letters

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