Gate-controllable 213 nm photo-responsivity in GeO2/SiO2/p-Si three-terminal solar-blind photodetectors

See the supplementary material for spectral response spectra of S1 and S2 MSM PDs, IDS-VDS characteristic curves of the breakdown VDS of the S1 SBPD under dark, IDS-T of the S1 and S2 SBPDs at VDS of 1 and 30 V with different OPD and dependence of PDCR, R, D*, and EQE on the OPD for the S1 SBPD, and comparison of the device performance of GeO2/SiO2/p-Si MSM PDs with other previously reported devices.