Enhancement of long-term memory of IGZO synaptic transistors by the introduction of Al2O3 charge trapping layer

The cross-sectional SEM image and structural characterization of the IGZO synaptic transistor, the XRD patterns and XPS analysis of the Al2O3 film, the retention characteristics comparison between devices with and without Al2O3 layer, the cycling stability tests of devices without Al2O3 layer, the recognition accuracy results for devices without Al2O3 layer, and a comprehensive performance comparison with state-of-the-art electrolyte-gated synaptic transistors.