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posted on 2025-09-02, 04:04 authored by Yajun Zhu, Hao Huang, Xue Zhang, Yujie Bai, Yufan Kang, Yongfeng Pei, Xintian Li, Shiwei Sun, Liting Liu, Bingsuo ZOU, Hao Guo, Wenqing Li, Xiangdong Yang, Xiangheng Xiao
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    DOI - Is supplement to <strong>Electron Beam Induced Reduction of Schottky Barrier Width For Low Contact Resistance Molybdenum Disulfide Field-Effect Transistor</strong>

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    Applied Physics Letters

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    2D semiconductor; MoS₂; E-beam irradiation; contact resistance; sulfur vacancies

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