Atomic Layer Deposition of Ultrathin Nitride Films for Enhanced Carrier Lifetimes and Photoluminescence in CdTe/MgCdTe Double Heterostructures
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posted on 2024-11-19, 13:04 authored by Haris Abbasi, Xin Qi, Zheng Ju, Zhenqiang Ma, Yong-Hang ZhangThe supplementary material provides a comprehensive analysis of the time-resolved photoluminescence (TRPL) and photoluminescence (PL) characteristics of the CdTe/MgCdTe double heterostructures (DHs) incorporating various passivation materials with an approximate thickness of 0.5 nm. In addition, it includes the calculations of surface recombination velocity (SRV) and recombination current density (J0) for all passivation layers.
