Supplementary material for Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy

The supplementary material contains the GeO flux dependency on cell temperature of the effusion cell, the vapor pressures of GeO vs. SnO, the LR signal during ternary (SnxGe1−x)O2 growth, details on the ToF-SIMS calibration, and the temperature-dependent Gibbs free energy changes for the reactions mentioned in this study.