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posted on 2025-03-19, 12:01
authored by
Zhan Peng Chen
,
Fangyuan Shi
,
Yunfei Lv
,
Zhengguo Xiao
,
Xingzhi Wu
,
Junyi Yang
,
Quanying Wu
,
Yinglin Song
,
Yu Fang
The supplementary materials are provided to better illustrate the carrier dynamics mechanism of C-related defects in GaN and their applications in optoelectronic devices.
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Categories
Physical sciences
Keywords
carrier trapping
absorption cross-section
transient absorption
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CC BY-NC 4.0
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