posted on 2024-08-05, 04:04authored byMartin Mosko, Mária Koscelanská, Antonia Moskova, Marek Vidis, Serhii Volkov, Maros Gregor, Tomas Roch, Branislav Grancic, Leonid Satrapinskyy, Peter Kus, Andrej Plecenik, Tomas Plecenik
In the Supplementary material we describe in detail (1) the deposition of the individual thin films, (2) the fabrication of the studied devices, (3) the resistivity of the individual thin films, (4) the structural and compositional characterization of the NbN thin films and NbN/Al/TiO2 stack, and (5) the normalization of the Andreev point contact spectra.