dataset
posted on 2025-02-04, 13:06 authored by Tomoki Nagase, Kenta chokawa, Emi Kano, Keisuke Fukuta, Takuo Sasaki, Seiji Fujikawa, Masamitsu Takahashi, Kenji Shiraishi, Atsushi Oshiyama, Tsutomu Araki, Nobuyuki IkarashiThe Supplementary Material includes experimental details, such as the fabrication process of the InN/GaN (0001) structure, as well as TEM specimen preparation and image simulation. Additionally, we provide the computational details and the atomic coordinates file of the InN/GaN structure.
