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posted on 2025-06-20, 04:08 authored by Yi Chen, Daniel Cho, John Hoang, Nick Altieri, Ji Zhu, Samantha Tan, Jane Chang
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  1. 1.
    DOI - Is supplement to Kinetics model for thermal selective etching of Si<sub>1-x</sub>Ge<sub>x</sub> in F<sub>2</sub>/Ar

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    JVST A: Vacuum, Surfaces, and Films

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    Thermal etchSelective SiGe etchKinetics model

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