Supplement Number 1

https://doi.org/10.60893/figshare.jap.29361095

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posted on 2025-07-08, 12:10 authored by Guy-vano Tsamo Tagougue, Eugenie Martinez, Marc Veillerot, Vincent Thoréton, Mickael Martin, Thierry Baron, Gauthier Lefevre, Sébastien Cavalaglio, Franck Bassani

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DOI - Is supplement to Study of In0.53Ga0.47As/InP interface in III-V heterostructures by coupling monoatomic argon sputtering and high-energy x-ray photoelectron

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4. Disappearance of the oxygen peak after argon sputtering Gallium-rich surface after argon sputtering Effect of argon sputtering on GaN, Ta₂O₃, and Au/Cu

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