Sub-100 nm β -Ga2O3 thin channel MOSFET with near 55 GHz fmax and > 100 V breakdown voltage

Name: Sub-100 nm β -Ga2O3 thin channel MOSFET with near 55 GHz fmax and > 100 V breakdown voltage
Published: 2024-08-05T04:00:38+00:00
License: https://creativecommons.org/licenses/by-nc/4.0/
Keywords: Gallium oxide

dataset

posted on 2024-08-05, 04:00 authored by Chinmoy Nath Saha, Abhishek Vaidya, Noor Nipu, Lingyu Meng, Dong Yu, Hongping Zhao, Uttam Singisetti