Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

We describe the parameters used for molecular-beam epitaxy of InAs/GaAs sub-monolayer (SML) and Stranski-Krastanov (SK) QDs, including the shutter sequences for SML-QDs, as well as the elemental incorporation rates (IR) and the substrate temperatures for all layers. We also discuss the isosurface threshold selection criteria and nextnano model development. Then, we present the LEAP data, as well as the computed probability density and band diagram for the reference QW. Finally, we also present the computed excited state probability densities for the SML-QDs and compare the real-space overlap of the electron-heavy-hole probability densities (i.e. the transition intensities) for all combinations of confined and excited states.