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Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods

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posted on 2024-06-12, 11:57 authored by Xingshuo Huang, Shao Qi Lim, Tom Ratcliff, Lachlan Smillie, Gordon Grzybowski, Bruce B. (Chip) Claflin, JEFFREY M. WARRENDER, James Williams
Figure S1: (a) Bright field TEM image of a GeSn sample grown by RPECVD with 7.5 at. % Sn and 906 nm. (b) Higher magnification image of one of the Sn rich regions, indicated by the blue arrow in (a), close to the sample surface. Figure S2: (a) A bright field TEM image of GeSn film with 8.3 at. % Sn and a thickness of 942 nm grown by RPECVD on Si; (b) a SADP taken from the circular region in (a), where the ⅓:⅓ diffraction spots are illustrated.

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    JVST B: Nanotechnology and Microelectronics

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