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posted on 2025-07-21, 04:02 authored by Rahul Rai, Hung Tran, Tsung-Ying Yang, Baquer Mazhari, Edward Chang
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  1. 1.
    DOI - Is supplement to Demonstration of High Threshold Voltage Tri-gate Hybrid Ferroelectric Gate Stack GaN HEMT With 1.2 GW/cm<sup>2</sup> Baliga’s Figure-of-Merit and highly Robust TDDB Stability.

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    Applied Physics Letters

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    Keywords

    GaM HEMTs, Tri-gate HEMTs

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    CC BY 4.0

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